Structural analysis of silicon oxynitride films deposited by PECVD (2004)
Fonte: Materials Science and Engineering B. Unidades: IF, EP
Assuntos: MATERIAIS, MATÉRIA CONDENSADA, FILMES FINOS, FÍSICA DE PLASMAS
ABNT
CRIADO, Denise et al. Structural analysis of silicon oxynitride films deposited by PECVD. Materials Science and Engineering B, 2004Tradução . . Disponível em: https://doi.org/10.1016/j.mseb.2004.05.017. Acesso em: 09 maio 2024.APA
Criado, D., Alayo Chávez, M. I., Pereyra, I., & Fantini, M. C. de A. (2004). Structural analysis of silicon oxynitride films deposited by PECVD. Materials Science and Engineering B. doi:10.1016/j.mseb.2004.05.017NLM
Criado D, Alayo Chávez MI, Pereyra I, Fantini MC de A. Structural analysis of silicon oxynitride films deposited by PECVD [Internet]. Materials Science and Engineering B. 2004 ;[citado 2024 maio 09 ] Available from: https://doi.org/10.1016/j.mseb.2004.05.017Vancouver
Criado D, Alayo Chávez MI, Pereyra I, Fantini MC de A. Structural analysis of silicon oxynitride films deposited by PECVD [Internet]. Materials Science and Engineering B. 2004 ;[citado 2024 maio 09 ] Available from: https://doi.org/10.1016/j.mseb.2004.05.017